Technische Details JAN2N5582 MOTOROLA
Description: TRANS NPN 50V 0.8A TO46-3, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 800 mA, Supplier Device Package: TO-46-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Current - Collector Cutoff (Max): 10µA (ICBO), Qualification: MIL-PRF-19500/423, Grade: Military, Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-206AB, TO-46-3 Metal Can, Packaging: Bulk, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Operating Temperature: -55°C ~ 200°C (TJ).
Weitere Produktangebote JAN2N5582
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
JAN2N5582 | Microchip Technology |
 Description: TRANS NPN 50V 0.8A TO46-3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 800 mA Supplier Device Package: TO-46-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Current - Collector Cutoff (Max): 10µA (ICBO) Qualification: MIL-PRF-19500/423 Grade: Military Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-206AB, TO-46-3 Metal Can Packaging: Bulk Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: -55°C ~ 200°C (TJ) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 105 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JAN2N5582 | Microchip / Microsemi |
Bipolar Transistors - BJT BJTs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 105 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JAN2N5582 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO46-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-46-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Qualification: MIL-PRF-19500/423
Grade: Military
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -55°C ~ 200°C (TJ)
Description: TRANS NPN 50V 0.8A TO46-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-46-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Qualification: MIL-PRF-19500/423
Grade: Military
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -55°C ~ 200°C (TJ)
Produkt ist nicht verfügbar
Mindestbestellmenge: 105 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JAN2N5582 |
|
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT BJTs
Bipolar Transistors - BJT BJTs
Produkt ist nicht verfügbar
Mindestbestellmenge: 105 Stücke
Im Einkaufswagen
Stück im Wert von UAH