Technische Details JAN2N6277 MOTOROLA
Description: TRANS NPN 150V 50A TO3, Current - Collector Cutoff (Max): 50µA, Vce Saturation (Max) @ Ib, Ic: 3V @ 10A, 50A, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-204AA, TO-3, Packaging: Bulk, Qualification: MIL-PRF-19500/514, Power - Max: 250 W, Voltage - Collector Emitter Breakdown (Max): 150 V, Current - Collector (Ic) (Max): 50 A, Grade: Military, Supplier Device Package: TO-3 (TO-204AA), DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20A, 4V.
Weitere Produktangebote JAN2N6277
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| JAN2N6277 | Microchip Technology |
 Description: TRANS NPN 150V 50A TO3Current - Collector Cutoff (Max): 50µA Vce Saturation (Max) @ Ib, Ic: 3V @ 10A, 50A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Packaging: Bulk Qualification: MIL-PRF-19500/514 Power - Max: 250 W Voltage - Collector Emitter Breakdown (Max): 150 V Current - Collector (Ic) (Max): 50 A Grade: Military Supplier Device Package: TO-3 (TO-204AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20A, 4V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
JAN2N6277 | Microchip / Microsemi |
Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JAN2N6277 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 150V 50A TO3
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 10A, 50A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Qualification: MIL-PRF-19500/514
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 A
Grade: Military
Supplier Device Package: TO-3 (TO-204AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20A, 4V
Description: TRANS NPN 150V 50A TO3
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 3V @ 10A, 50A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Qualification: MIL-PRF-19500/514
Power - Max: 250 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 50 A
Grade: Military
Supplier Device Package: TO-3 (TO-204AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20A, 4V
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JAN2N6277 |
|
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Power BJT
Bipolar Transistors - BJT Power BJT
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH