Technische Details JAN2N6338 MOTOROLA
Description: TRANS NPN 100V 50UA TO3, Power - Max: 200 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 50 µA, Part Status: Active, Supplier Device Package: TO-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10A, 2V, Current - Collector Cutoff (Max): 50µA, Vce Saturation (Max) @ Ib, Ic: 1.8V @ 2.5A, 25A, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-204AA, TO-3, Packaging: Bulk.
Weitere Produktangebote JAN2N6338
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
JAN2N6338 | Microchip Technology |
Description: TRANS NPN 100V 50UA TO3 Power - Max: 200 W Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 50 µA Part Status: Active Supplier Device Package: TO-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10A, 2V Current - Collector Cutoff (Max): 50µA Vce Saturation (Max) @ Ib, Ic: 1.8V @ 2.5A, 25A Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-204AA, TO-3 Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
JAN2N6338 | Microchip / Microsemi |
 Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JAN2N6338 |
Hersteller: Microchip Technology
Description: TRANS NPN 100V 50UA TO3
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 50 µA
Part Status: Active
Supplier Device Package: TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10A, 2V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 2.5A, 25A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Description: TRANS NPN 100V 50UA TO3
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 50 µA
Part Status: Active
Supplier Device Package: TO-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10A, 2V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 1.8V @ 2.5A, 25A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-204AA, TO-3
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JAN2N6338 |
|
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Power BJT
Bipolar Transistors - BJT Power BJT
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH