JAN2N6849U Microsemi Corporation
Hersteller: Microsemi Corporation
Description: MOSFET P-CH 100V 6.5A 18ULCC
Qualification: MIL-PRF-19500/564
Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Military
Supplier Device Package: 18-ULCC (9.14x7.49)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 18-CLCC
Packaging: Bulk
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Technische Details JAN2N6849U Microsemi Corporation
Description: MOSFET P-CH 100V 6.5A 18ULCC, Qualification: MIL-PRF-19500/564, Gate Charge (Qg) (Max) @ Vgs: 34.8 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Military, Supplier Device Package: 18-ULCC (9.14x7.49), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 800mW (Ta), 25W (Tc), Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 18-CLCC, Packaging: Bulk.