Technische Details JAN2N696 MOTOROLA
Description: TRANS NPN 40V TO5, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V, Supplier Device Package: TO-5AA, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 600 mW.
Weitere Produktangebote JAN2N696
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
JAN2N696 | Microchip Technology |
Description: TRANS NPN 40V TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V Supplier Device Package: TO-5AA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 600 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| JAN2N696 | Microsemi |
 Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| JAN2N696 |
Hersteller: Microchip Technology
Description: TRANS NPN 40V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V
Supplier Device Package: TO-5AA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
Description: TRANS NPN 40V TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 10V
Supplier Device Package: TO-5AA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 600 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JAN2N696 |
|
Hersteller: Microsemi
Bipolar Transistors - BJT Power BJT
Bipolar Transistors - BJT Power BJT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH