Jan2N6989 Microchip Technology
Hersteller: Microchip Technology
Description: TRANS 4NPN 50V 0.8A TO116
Supplier Device Package: TO-116
Qualification: MIL-PRF-19500/559
Grade: Military
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 800mA
Power - Max: 1.5W
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: 4 NPN (Quad)
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Bulk
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Technische Details Jan2N6989 Microchip Technology
Description: TRANS 4NPN 50V 0.8A TO116, Supplier Device Package: TO-116, Qualification: MIL-PRF-19500/559, Grade: Military, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 800mA, Power - Max: 1.5W, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: 4 NPN (Quad), Mounting Type: Through Hole, Package / Case: 14-DIP (0.300", 7.62mm), Packaging: Bulk.
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Jan2N6989 | Microchip / Microsemi |
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Hersteller: Microchip / Microsemi
MOSFETs 50V 800mA 1.5W NPN Quad - Small-Signal BJT THT
MOSFETs 50V 800mA 1.5W NPN Quad - Small-Signal BJT THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH