JANS2N2484UBC/TR Microchip Technology
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Power - Max: 360 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: UBC
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Current - Collector Cutoff (Max): 2nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
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Technische Details JANS2N2484UBC/TR Microchip Technology
Description: SMALL-SIGNAL BJT, Power - Max: 360 mW, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 50 mA, Supplier Device Package: UBC, DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 1mA, 5V, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 3-SMD, No Lead, Packaging: Tape & Reel (TR), Current - Collector Cutoff (Max): 2nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA.
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| JANS2N2484UBC/TR | Microchip / Microsemi |
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Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 60V 50mA 360mW 3-Pin CER NPN Small-Signal BJT TR
Bipolar Transistors - BJT 60V 50mA 360mW 3-Pin CER NPN Small-Signal BJT TR
Produkt ist nicht verfügbar
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen
Stück im Wert von UAH