JANS2N3737 Microchip Technology
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1.5A TO-46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Supplier Device Package: TO-46
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/395
Description: TRANS NPN 40V 1.5A TO-46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V
Supplier Device Package: TO-46
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/395
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details JANS2N3737 Microchip Technology
Description: TRANS NPN 40V 1.5A TO-46, Packaging: Bulk, Package / Case: TO-206AB, TO-46-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A, Current - Collector Cutoff (Max): 200nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 1V, Supplier Device Package: TO-46, Current - Collector (Ic) (Max): 1.5 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 500 mW, Grade: Military, Qualification: MIL-PRF-19500/395.
Weitere Produktangebote JANS2N3737
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| JANS2N3737 | Hersteller : Microchip / Microsemi |
 Bipolar Transistors - BJT Small-Signal BJT |
Produkt ist nicht verfügbar |