JANSD2N2906A Microchip Technology
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
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Technische Details JANSD2N2906A Microchip Technology
Description: RH SMALL-SIGNAL BJT, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 600 mA, Supplier Device Package: TO-18 (TO-206AA), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Current - Collector Cutoff (Max): 50nA, Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Operating Temperature: -65°C ~ 200°C, Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-206AA, TO-18-3 Metal Can, Packaging: Bulk.
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|---|---|---|---|---|---|
| JANSD2N2906A | Microchip / Microsemi |
 Bipolar Transistors - BJT 40V 600mA 400mW PNP RH Small-Signal BJT THT |
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Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JANSD2N2906A |
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Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 40V 600mA 400mW PNP RH Small-Signal BJT THT
Bipolar Transistors - BJT 40V 600mA 400mW PNP RH Small-Signal BJT THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH