JANSD2N3700 Microchip Technology
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
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Technische Details JANSD2N3700 Microchip Technology
Description: RH SMALL-SIGNAL BJT, Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-206AA, TO-18-3 Metal Can, Packaging: Bulk, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 1 A, Supplier Device Package: TO-18 (TO-206AA), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Current - Collector Cutoff (Max): 10nA, Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Operating Temperature: -65°C ~ 200°C (TJ).
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| JANSD2N3700 | Microchip / Microsemi |
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Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 80V 1A 500mW RH Small-Signal BJT THT
Bipolar Transistors - BJT 80V 1A 500mW RH Small-Signal BJT THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH