JANSD2N5151L Microchip Technology
Hersteller: Microchip Technology
Description: RH POWER BJT
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 2 A
Part Status: Active
Supplier Device Package: TO-5AA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V
Current - Collector Cutoff (Max): 50µA
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
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Technische Details JANSD2N5151L Microchip Technology
Description: RH POWER BJT, Packaging: Bulk, Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 2 A, Part Status: Active, Supplier Device Package: TO-5AA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 2.5A, 5V, Current - Collector Cutoff (Max): 50µA, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 5A, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-205AA, TO-5-3 Metal Can.
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| JANSD2N5151L | Microchip / Microsemi |
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Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 80V 2A 1W PNP Long-Lead RH Power BJT THT
Bipolar Transistors - BJT 80V 2A 1W PNP Long-Lead RH Power BJT THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH