JANSL2N3501UB/TR Microchip Technology
Hersteller: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Grade: Military
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Qualification: MIL-PRF-19500/366
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Technische Details JANSL2N3501UB/TR Microchip Technology
Description: TRANS NPN 150V 0.3A UB, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 150 V, Current - Collector (Ic) (Max): 300 mA, Grade: Military, Supplier Device Package: UB, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 3-SMD, No Lead, Packaging: Tape & Reel (TR), Qualification: MIL-PRF-19500/366.
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| JANSL2N3501UB/TR | Microchip / Microsemi | Bipolar Transistors - BJT RH Small-Signal BJT |
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Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JANSL2N3501UB/TR |
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT RH Small-Signal BJT
Bipolar Transistors - BJT RH Small-Signal BJT
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH