JANSM2N3700UB Microchip Technology
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
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Technische Details JANSM2N3700UB Microchip Technology
Description: RH SMALL-SIGNAL BJT, Package / Case: 3-SMD, No Lead, Packaging: Bulk, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 80 V, Current - Collector (Ic) (Max): 1 A, Supplier Device Package: UB, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Current - Collector Cutoff (Max): 10nA, Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount.
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| JANSM2N3700UB | Microchip / Microsemi |
 Bipolar Transistors - BJT 80V 1A 500mW Round-End RH Small-Signal BJT |
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Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 80V 1A 500mW Round-End RH Small-Signal BJT
Bipolar Transistors - BJT 80V 1A 500mW Round-End RH Small-Signal BJT
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH