JANSP2N2218AL Microchip Technology
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-5AA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
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Technische Details JANSP2N2218AL Microchip Technology
Description: RH SMALL-SIGNAL BJT, Power - Max: 800 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 800 mA, Part Status: Active, Supplier Device Package: TO-5AA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Current - Collector Cutoff (Max): 10nA, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Operating Temperature: -55°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-205AA, TO-5-3 Metal Can, Packaging: Bulk.
Weitere Produktangebote JANSP2N2218AL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| JANSP2N2218AL | Microchip / Microsemi | Bipolar Transistors - BJT 30V 800mA 800mW NPN Long-Lead RH Small-Signal BJT THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| JANSP2N2218AL |
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 30V 800mA 800mW NPN Long-Lead RH Small-Signal BJT THT
Bipolar Transistors - BJT 30V 800mA 800mW NPN Long-Lead RH Small-Signal BJT THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH