JANSP2N3810U Microchip Technology
Hersteller: Microchip Technology
Description: DUAL RH SMALL-SIGNAL BJT
Supplier Device Package: U
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 50mA
Power - Max: 350mW
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Packaging: Bulk
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Technische Details JANSP2N3810U Microchip Technology
Description: DUAL RH SMALL-SIGNAL BJT, Supplier Device Package: U, DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA, Voltage - Collector Emitter Breakdown (Max): 60V, Current - Collector (Ic) (Max): 50mA, Power - Max: 350mW, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: 2 PNP (Dual), Mounting Type: Surface Mount, Package / Case: 6-SMD, No Lead, Packaging: Bulk.
Weitere Produktangebote JANSP2N3810U
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| JANSP2N3810U | Microchip / Microsemi | Bipolar Transistors - BJT 60V 50MA 350MW Dual RH Small-Signal BJT THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JANSP2N3810U |
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 60V 50MA 350MW Dual RH Small-Signal BJT THT
Bipolar Transistors - BJT 60V 50MA 350MW Dual RH Small-Signal BJT THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH