JANSP2N3810U Microchip Technology
Hersteller: Microchip Technology
Description: DUAL RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: U
Description: DUAL RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: U
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Technische Details JANSP2N3810U Microchip Technology
Description: DUAL RH SMALL-SIGNAL BJT, Packaging: Bulk, Package / Case: 6-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: -65°C ~ 200°C (TJ), Power - Max: 350mW, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V, Supplier Device Package: U.
Weitere Produktangebote JANSP2N3810U
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| JANSP2N3810U | Hersteller : Microchip / Microsemi | Bipolar Transistors - BJT Dual RH Small-Signal BJT |
Produkt ist nicht verfügbar |