JANSR2N2221AUB/TR Microchip Technology
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Tape & Reel (TR)
Produktrezensionen
Produktbewertung abgeben
Technische Details JANSR2N2221AUB/TR Microchip Technology
Description: RH SMALL-SIGNAL BJT, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 800 mA, Supplier Device Package: UB, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Current - Collector Cutoff (Max): 50nA, Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: 3-SMD, No Lead, Packaging: Tape & Reel (TR).
Weitere Produktangebote JANSR2N2221AUB/TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
JANSR2N2221AUB/TR | Hersteller : Microchip / Microsemi |
 Bipolar Transistors - BJT 50V 800mA 650mW 3 Pin CER RH Small-Signal BJT TR |
Produkt ist nicht verfügbar |