JANSR2N2920U Microchip Technology
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Qualification: MIL-PRF-19500/355
Grade: Military
Supplier Device Package: 6-SMD
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 30mA
Power - Max: 350mW
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Packaging: Tray
Produktrezensionen
Produktbewertung abgeben
Technische Details JANSR2N2920U Microchip Technology
Description: RH SMALL-SIGNAL BJT, Qualification: MIL-PRF-19500/355, Grade: Military, Supplier Device Package: 6-SMD, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA, Voltage - Collector Emitter Breakdown (Max): 60V, Current - Collector (Ic) (Max): 30mA, Power - Max: 350mW, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: 2 NPN (Dual), Mounting Type: Surface Mount, Package / Case: 6-SMD, No Lead, Packaging: Tray.
Weitere Produktangebote JANSR2N2920U
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| JANSR2N2920U | Hersteller : Microchip / Microsemi |
 Bipolar Transistors - BJT 60V 30mA 350mW RH Small-Signal BJT SQ SMT |
Produkt ist nicht verfügbar |