JANSR2N3439L Microchip Technology
Hersteller: Microchip Technology
Description: TRANS NPN 350V 1A TO5
Qualification: MIL-PRF-19500/368
Grade: Military
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5AA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
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Technische Details JANSR2N3439L Microchip Technology
Description: TRANS NPN 350V 1A TO5, Qualification: MIL-PRF-19500/368, Grade: Military, Power - Max: 800 mW, Voltage - Collector Emitter Breakdown (Max): 350 V, Current - Collector (Ic) (Max): 1 A, Part Status: Active, Supplier Device Package: TO-5AA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V, Current - Collector Cutoff (Max): 2µA, Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-205AA, TO-5-3 Metal Can, Packaging: Bulk.
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|---|---|---|---|---|---|
| JANSR2N3439L | Microchip / Microsemi |
 Bipolar Transistors - BJT 350V 1A 800mW Long-Lead Power BJT THT |
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Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 350V 1A 800mW Long-Lead Power BJT THT
Bipolar Transistors - BJT 350V 1A 800mW Long-Lead Power BJT THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
Im Einkaufswagen
Stück im Wert von UAH