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JANSR2N3439U4 Microchip Technology
Hersteller: Microchip Technology
Description: TRANS NPN 350V 1A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: U4
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Description: TRANS NPN 350V 1A U4
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: U4
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
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Technische Details JANSR2N3439U4 Microchip Technology
Description: TRANS NPN 350V 1A U4, Packaging: Bulk, Package / Case: 3-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA, Current - Collector Cutoff (Max): 2µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V, Supplier Device Package: U4, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 350 V, Power - Max: 800 mW.
Weitere Produktangebote JANSR2N3439U4
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| JANSR2N3439U4 | Hersteller : Microchip / Microsemi |
 Bipolar Transistors - BJT 350 V RH Power BJT |
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