JANSR2N3440

JANSR2N3440 Microchip Technology


8947-lds-0134-datasheet
Hersteller: Microchip Technology
Description: TRANS NPN 250V 1A TO39
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Tray
Qualification: MIL-PRF-19500/368
Grade: Military
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Technische Details JANSR2N3440 Microchip Technology

Description: TRANS NPN 250V 1A TO39, Voltage - Collector Emitter Breakdown (Max): 250 V, Current - Collector (Ic) (Max): 1 A, Part Status: Active, Supplier Device Package: TO-39 (TO-205AD), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V, Current - Collector Cutoff (Max): 2µA, Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-205AD, TO-39-3 Metal Can, Packaging: Tray, Qualification: MIL-PRF-19500/368, Grade: Military.

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JANSR2N3440 JANSR2N3440 Hersteller : Microchip / Microsemi LDS_0134_2N3439_40_L_UA_RADHARD.pdf Bipolar Transistors - BJT 250V 1A 800mW RH Power BJT THT
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