JANSR2N7593U3 Microchip Technology

Description: RH MOSFET _ U3, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 12V, Part Status: Active, Supplier Device Package: U3 (SMD-0.5), Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 75W (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 7.8A, 12V, Current - Continuous Drain (Id) @ 25°C: 12.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-SMD, No Lead, Qualification: MIL-PRF-19500, Grade: Military, Packaging: Tray.