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JANTX1N3070-1

JANTX1N3070-1 Microchip Technology


5789-1n3070-1-datasheet Hersteller: Microchip Technology
Description: DIODE GEN PURP 175V 100MA DO7
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: DO-7
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 175 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
Qualification: MIL-PRF-19500/169
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Technische Details JANTX1N3070-1 Microchip Technology

Description: DIODE GEN PURP 175V 100MA DO7, Packaging: Bulk, Package / Case: DO-204AA, DO-7, Axial, Mounting Type: Through Hole, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 50 ns, Technology: Standard, Current - Average Rectified (Io): 100mA, Supplier Device Package: DO-7, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 175 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA, Current - Reverse Leakage @ Vr: 100 nA @ 175 V, Qualification: MIL-PRF-19500/169.

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JANTX1N3070-1 JANTX1N3070-1 Hersteller : Microchip Technology 1N3070_1-1592331.pdf Diodes - General Purpose, Power, Switching Switching Diode
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