JANTX1N3891R Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 12A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 115pF @ 10V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 38 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: MIL-PRF-19500/304
Description: DIODE GEN PURP 200V 12A DO203AA
Packaging: Bulk
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard, Reverse Polarity
Capacitance @ Vr, F: 115pF @ 10V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 38 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: MIL-PRF-19500/304
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Technische Details JANTX1N3891R Microchip Technology
Description: DIODE GEN PURP 200V 12A DO203AA, Packaging: Bulk, Package / Case: DO-203AA, DO-4, Stud, Mounting Type: Stud Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 200 ns, Technology: Standard, Reverse Polarity, Capacitance @ Vr, F: 115pF @ 10V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: DO-203AA (DO-4), Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 38 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V, Qualification: MIL-PRF-19500/304.