JANTX1N4248/TR Microchip Technology

Description: DIODE GEN PURP 800V 1A E3, Packaging: Tape & Reel (TR), Package / Case: E3, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 5 µs, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: E3, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A, Current - Reverse Leakage @ Vr: 1 µA @ 800 V, Grade: Military, Qualification: MIL-PRF-19500/286.