Technische Details JANTX1N5418US Microchip / Microsemi
Description: DIODE GEN PURP 400V 3A D-5B, Qualification: MIL-PRF-19500/411, Grade: Military, Current - Reverse Leakage @ Vr: 2 µA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A, Voltage - DC Reverse (Vr) (Max): 400 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: D-5B, Current - Average Rectified (Io): 3A, Technology: Standard, Reverse Recovery Time (trr): 150 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SQ-MELF, E, Packaging: Bulk.
Weitere Produktangebote JANTX1N5418US
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| JANTX1N5418US | MICROSEMI |
 D-5B/3 A, SILICON, RECTIFIER DIODE 1N5418Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
JANTX1N5418US | Microchip Technology |
Description: DIODE GEN PURP 400V 3A D-5B Qualification: MIL-PRF-19500/411 Grade: Military Current - Reverse Leakage @ Vr: 2 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: D-5B Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SQ-MELF, E Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JANTX1N5418US |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 3A D-5B
Qualification: MIL-PRF-19500/411
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Description: DIODE GEN PURP 400V 3A D-5B
Qualification: MIL-PRF-19500/411
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH