auf Bestellung 48 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 18.57 EUR |
| 10+ | 17.07 EUR |
| 25+ | 16.37 EUR |
| 100+ | 10.84 EUR |
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Technische Details JANTX1N5616US Microchip / Microsemi
Description: DIODE GEN PURP 400V 1A D-5A, Packaging: Bulk, Package / Case: SQ-MELF, A, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: D-5A, Operating Temperature - Junction: -65°C ~ 200°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 400 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A, Current - Reverse Leakage @ Vr: 500 nA @ 400 V.
Weitere Produktangebote JANTX1N5616US
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| JANTX1N5616US | Hersteller : MICROSEMI |
 A_SQ_MELF/1 A, SILICON, SIGNAL DIODE 1N5616Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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JANTX1N5616US | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 400V 1A D-5A Packaging: Bulk Package / Case: SQ-MELF, A Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: D-5A Operating Temperature - Junction: -65°C ~ 200°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Current - Reverse Leakage @ Vr: 500 nA @ 400 V |
Produkt ist nicht verfügbar |