| Anzahl | Preis |
|---|---|
| 1+ | 18.57 EUR |
| 10+ | 17.07 EUR |
| 25+ | 16.37 EUR |
| 100+ | 10.84 EUR |
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Technische Details JANTX1N5616US Microchip / Microsemi
Description: DIODE GEN PURP 400V 1A D-5A, Current - Reverse Leakage @ Vr: 500 nA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 400 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 200°C, Supplier Device Package: D-5A, Current - Average Rectified (Io): 1A, Technology: Standard, Reverse Recovery Time (trr): 2 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SQ-MELF, A, Packaging: Bulk.
Weitere Produktangebote JANTX1N5616US
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| JANTX1N5616US | MICROSEMI |
 A_SQ_MELF/1 A, SILICON, SIGNAL DIODE 1N5616Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
JANTX1N5616US | Microchip Technology |
Description: DIODE GEN PURP 400V 1A D-5A Current - Reverse Leakage @ Vr: 500 nA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -65°C ~ 200°C Supplier Device Package: D-5A Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SQ-MELF, A Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 103 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JANTX1N5616US |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A D-5A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Description: DIODE GEN PURP 400V 1A D-5A
Current - Reverse Leakage @ Vr: 500 nA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 103 Stücke
Im Einkaufswagen
Stück im Wert von UAH