JANTX1N5809US Microchip / Microsemi
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 13.31 EUR |
| 100+ | 12.36 EUR |
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Technische Details JANTX1N5809US Microchip / Microsemi
Description: DIODE GEN PURP 100V 3A B SQ-MELF, Packaging: Bulk, Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Capacitance @ Vr, F: 60pF @ 10V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: B, SQ-MELF, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V, Qualification: MIL-PRF-19500/477.
Weitere Produktangebote JANTX1N5809US
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| JANTX1N5809US | Hersteller : MICROSEMI |
E_SQ._MELFULTRA FAST RECTIFIER (LESS THAN 100NS) 1N5809Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| JANTX1N5809US | Hersteller : Semtech |
MIL 6A SUPERFAST RECT - SM, SQUARE/SQUARE 1N5809 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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JANTX1N5809US | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 100V 3A B SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: MIL-PRF-19500/477 |
Produkt ist nicht verfügbar |
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| JANTX1N5809US | Hersteller : Semtech Corporation |
Description: DIODE GEN PURP 100V 6A Packaging: Bulk Package / Case: SQ-MELF Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 5V, 1MHz Current - Average Rectified (Io): 6A Grade: Military Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V Qualification: MIL-PRF-19500/477 |
Produkt ist nicht verfügbar |