JANTX1N5811/TR Microchip Technology

Description: DIODE GEN PURP 150V 3A B AXIAL, Qualification: MIL-PRF-19500/477, Grade: Military, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: B, Axial, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 5 µA @ 150 V, Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A, Voltage - DC Reverse (Vr) (Max): 150 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: B, Axial, Current - Average Rectified (Io): 3A, Capacitance @ Vr, F: 60pF @ 10V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 30 ns.