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JANTX1N6475US/TR

JANTX1N6475US/TR Microchip Technology


Hersteller: Microchip Technology
Description: TVS DIODE 40.3VWM 63.5VC G-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, G
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 135A (8/20µs)
Voltage - Reverse Standoff (Typ): 40.3V
Supplier Device Package: G-MELF (D-5C)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 43.7V
Voltage - Clamping (Max) @ Ipp: 63.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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Technische Details JANTX1N6475US/TR Microchip Technology

Description: TVS DIODE 40.3VWM 63.5VC G-MELF, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, G, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 135A (8/20µs), Voltage - Reverse Standoff (Typ): 40.3V, Supplier Device Package: G-MELF (D-5C), Unidirectional Channels: 1, Voltage - Breakdown (Min): 43.7V, Voltage - Clamping (Max) @ Ipp: 63.5V, Power - Peak Pulse: 1500W (1.5kW), Power Line Protection: No, Part Status: Active.

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JANTX1N6475US/TR JANTX1N6475US/TR Hersteller : Microsemi SD51A-1393052.pdf ESD Suppressors / TVS Diodes
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