JANTX1N6620US/TR Microchip Technology

Description: DIODE GEN PURP 220V 2A D-5A, Current - Reverse Leakage @ Vr: 500 nA @ 220 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A, Voltage - DC Reverse (Vr) (Max): 220 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: D-5A, Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 10pF @ 10V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 30 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SQ-MELF, A, Packaging: Tape & Reel (TR).