JANTX1N6620US Microchip / Microsemi
| Anzahl | Preis |
|---|---|
| 1+ | 26.72 EUR |
| 10+ | 25.31 EUR |
| 25+ | 24.59 EUR |
| 100+ | 22.9 EUR |
| 250+ | 20.79 EUR |
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Technische Details JANTX1N6620US Microchip / Microsemi
Description: DIODE GEN PURP 220V 2A D-5A, Current - Reverse Leakage @ Vr: 500 nA @ 220 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A, Voltage - DC Reverse (Vr) (Max): 220 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: D-5A, Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 10pF @ 10V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 30 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SQ-MELF, A, Packaging: Bulk.
Weitere Produktangebote JANTX1N6620US
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| JANTX1N6620US | MICROSEMI |
 A_SQ._MELF 1N6620Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
JANTX1N6620US | Microchip Technology |
Description: DIODE GEN PURP 220V 2A D-5A Current - Reverse Leakage @ Vr: 500 nA @ 220 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A Voltage - DC Reverse (Vr) (Max): 220 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: D-5A Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 10pF @ 10V, 1MHz Technology: Standard Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SQ-MELF, A Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JANTX1N6620US |
|
Hersteller: Microchip Technology
Description: DIODE GEN PURP 220V 2A D-5A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 220 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Description: DIODE GEN PURP 220V 2A D-5A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 220 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH