JANTX1N6622US/TR Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 2A D-5A
Current - Reverse Leakage @ Vr: 500 nA @ 660 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 660 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Tape & Reel (TR)
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Technische Details JANTX1N6622US/TR Microchip Technology
Description: DIODE GEN PURP 660V 2A D-5A, Current - Reverse Leakage @ Vr: 500 nA @ 660 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A, Voltage - DC Reverse (Vr) (Max): 660 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 150°C, Supplier Device Package: D-5A, Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 10pF @ 10V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 30 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SQ-MELF, A, Packaging: Tape & Reel (TR).
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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JANTX1N6622US/TR | Hersteller : Microchip / Microsemi |
 Rectifiers 660V UFR,FRR SQ SMT TR |
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