Technische Details JANTX2N1613 MOTOROLA
Description: TRANS NPN 30V 0.5A TO-39, Power - Max: 800 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 500 mA, Part Status: Discontinued at Digi-Key, Supplier Device Package: TO-39, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Qualification: MIL-PRF-19500/181, Grade: Military, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-205AD, TO-39-3 Metal Can, Packaging: Bulk.
Weitere Produktangebote JANTX2N1613
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
JANTX2N1613 | Microchip Technology |
 Description: TRANS NPN 30V 0.5A TO-39Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 500 mA Part Status: Discontinued at Digi-Key Supplier Device Package: TO-39 DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Qualification: MIL-PRF-19500/181 Grade: Military Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-205AD, TO-39-3 Metal Can Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JANTX2N1613 | Microchip / Microsemi |
Bipolar Transistors - BJT 30V 500mA 800mW NPN Power BJT THT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JANTX2N1613 |
|
Hersteller: Microchip Technology
Description: TRANS NPN 30V 0.5A TO-39
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Qualification: MIL-PRF-19500/181
Grade: Military
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Description: TRANS NPN 30V 0.5A TO-39
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Qualification: MIL-PRF-19500/181
Grade: Military
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANTX2N1613 |
|
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 30V 500mA 800mW NPN Power BJT THT
Bipolar Transistors - BJT 30V 500mA 800mW NPN Power BJT THT
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH