JANTX2N2907AUB Microchip / Microsemi
Hersteller: Microchip / MicrosemiBipolar Transistors - BJT 60V 600mA 500mW PNP 3 Pin CER Small-Signal BJT
auf Bestellung 2252 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.38 EUR |
| 100+ | 8.71 EUR |
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Technische Details JANTX2N2907AUB Microchip / Microsemi
Description: TRANS PNP 60V 0.6A UB, Packaging: Bulk, Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 50nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: UB, Grade: Military, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 500 mW, Qualification: MIL-PRF-19500/291.
Weitere Produktangebote JANTX2N2907AUB
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Verfügbarkeit |
Preis |
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| JANTX2N2907AUB | Hersteller : MICROSEMI |
UB/PNP SMALL SIGNAL SILICON TRANSISTOR 2N2907 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-21 Tag (e) |
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JANTX2N2907AUB | Hersteller : Semicoa |
Trans GP BJT PNP 60V 0.6A 500mW 4-Pin Case UB |
Produkt ist nicht verfügbar |
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JANTX2N2907AUB | Hersteller : Microchip Technology |
Description: TRANS PNP 60V 0.6A UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Grade: Military Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW Qualification: MIL-PRF-19500/291 |
Produkt ist nicht verfügbar |