JANTX2N3637 Microchip / Microsemi
auf Bestellung 211 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 20.15 EUR |
| 100+ | 18.71 EUR |
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Technische Details JANTX2N3637 Microchip / Microsemi
Description: TRANS PNP 175V 1A TO-5, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V, Supplier Device Package: TO-5, Grade: Military, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 175 V, Power - Max: 1 W, Qualification: MIL-PRF-19500/357.
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JANTX2N3637 | Hersteller : Microchip Technology |
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JANTX2N3637 | Hersteller : Microchip Technology |
Description: TRANS PNP 175V 1A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 175 V Power - Max: 1 W Qualification: MIL-PRF-19500/357 |
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