Jantx2N5416S Microchip Technology
Hersteller: Microchip Technology
Description: TRANS PNP 300V 1A TO-39
Power - Max: 750 mW
Voltage - Collector Emitter Breakdown (Max): 300 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Grade: Military
Packaging: Bulk
Qualification: MIL-PRF-19500/485
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Technische Details Jantx2N5416S Microchip Technology
Description: TRANS PNP 300V 1A TO-39, Power - Max: 750 mW, Voltage - Collector Emitter Breakdown (Max): 300 V, Current - Collector (Ic) (Max): 1 A, Part Status: Active, Supplier Device Package: TO-39, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V, Current - Collector Cutoff (Max): 1mA, Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: PNP, Mounting Type: Through Hole, Package / Case: TO-205AD, TO-39-3 Metal Can, Grade: Military, Packaging: Bulk, Qualification: MIL-PRF-19500/485.
Weitere Produktangebote Jantx2N5416S nach Preis ab 15.26 EUR bis 15.61 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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| Jantx2N5416S | Microchip / Microsemi |
Bipolar Transistors - BJT 300 V Power BJT |
auf Bestellung 213 Stücke: Lieferzeit 10-14 Tag (e) |
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| Jantx2N5416S |
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Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT 300 V Power BJT
Bipolar Transistors - BJT 300 V Power BJT
auf Bestellung 213 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 15.61 EUR |
| 10+ | 15.54 EUR |
| 25+ | 15.42 EUR |
| 100+ | 15.26 EUR |