Technische Details JANTX2N6788U Microsemi
Description: MOSFET N-CH 100V 4.5A 18ULCC, Packaging: Bulk, Package / Case: 18-CLCC, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V, Power Dissipation (Max): 800mW (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 18-ULCC (9.14x7.49), Grade: Military, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Qualification: MIL-PRF-19500/555.
Weitere Produktangebote JANTX2N6788U
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| JANTX2N6788U | Hersteller : Microchip Technology |
 Trans MOSFET N-CH 100V 4.5A 18-Pin CLCC |
Produkt ist nicht verfügbar |
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| JANTX2N6788U | Hersteller : MICROSEMI |
U-18 LCC/N-CHANNEL MOSFET 2N6788 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| JANTX2N6788U | Hersteller : Microsemi Corporation |
Description: MOSFET N-CH 100V 4.5A 18ULCC Packaging: Bulk Package / Case: 18-CLCC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V Power Dissipation (Max): 800mW (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 18-ULCC (9.14x7.49) Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Qualification: MIL-PRF-19500/555 |
Produkt ist nicht verfügbar |