Technische Details JANTX2N6788U MICROSEMI
Description: MOSFET N-CH 100V 4.5A 18ULCC, Packaging: Bulk, Package / Case: 18-CLCC, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V, Power Dissipation (Max): 800mW (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 18-ULCC (9.14x7.49), Grade: Military, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Qualification: MIL-PRF-19500/555.
Weitere Produktangebote JANTX2N6788U
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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|---|---|---|---|---|---|
| JANTX2N6788U | Microsemi Corporation |
Description: MOSFET N-CH 100V 4.5A 18ULCCPackaging: Bulk Package / Case: 18-CLCC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V Power Dissipation (Max): 800mW (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 18-ULCC (9.14x7.49) Grade: Military Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Qualification: MIL-PRF-19500/555 |
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| JANTX2N6788U |
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Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 4.5A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Qualification: MIL-PRF-19500/555
Description: MOSFET N-CH 100V 4.5A 18ULCC
Packaging: Bulk
Package / Case: 18-CLCC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6A, 10V
Power Dissipation (Max): 800mW (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 18-ULCC (9.14x7.49)
Grade: Military
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Qualification: MIL-PRF-19500/555
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

