Technische Details JANTX2N718A MOTOROLA
Description: TRANS NPN 30V 0.5A TO18, Qualification: MIL-PRF-19500/181, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: TO-18 (TO-206AA), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V, Current - Collector Cutoff (Max): 10µA (ICBO), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA, Operating Temperature: -65°C ~ 200°C (TJ), Transistor Type: NPN, Mounting Type: Through Hole, Package / Case: TO-206AA, TO-18-3 Metal Can, Packaging: Bulk, Grade: Military.
Weitere Produktangebote JANTX2N718A
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
JANTX2N718A | Microchip Technology |
 Description: TRANS NPN 30V 0.5A TO18Qualification: MIL-PRF-19500/181 Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: TO-18 (TO-206AA) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Current - Collector Cutoff (Max): 10µA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Operating Temperature: -65°C ~ 200°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-206AA, TO-18-3 Metal Can Packaging: Bulk Grade: Military |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| JANTX2N718A | Microchip / Microsemi |
Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JANTX2N718A |
|
Hersteller: Microchip Technology
Description: TRANS NPN 30V 0.5A TO18
Qualification: MIL-PRF-19500/181
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Grade: Military
Description: TRANS NPN 30V 0.5A TO18
Qualification: MIL-PRF-19500/181
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Grade: Military
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTX2N718A |
|
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Power BJT
Bipolar Transistors - BJT Power BJT
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
Im Einkaufswagen
Stück im Wert von UAH