JANTXV1N4248

JANTXV1N4248 Microchip Technology


123513-lds-0191-datasheet Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Grade: Military
Qualification: MIL-PRF-19500/286
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Technische Details JANTXV1N4248 Microchip Technology

Description: DIODE GEN PURP 800V 1A AXIAL, Packaging: Bulk, Package / Case: A, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 5 µs, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: A, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A, Current - Reverse Leakage @ Vr: 1 µA @ 800 V, Grade: Military, Qualification: MIL-PRF-19500/286.

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JANTXV1N4248 JANTXV1N4248 Hersteller : Semtech SEMTS05384_1-2575214.pdf ESD Suppressors / TVS Diodes D MET 1A STD 800V HRV
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