JANTXV1N5417US Microchip Technology
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 3A D5B
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
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Technische Details JANTXV1N5417US Microchip Technology
Description: DIODE STANDARD 200V 3A D5B, Qualification: MIL-PRF-19500/411, Current - Reverse Leakage @ Vr: 1 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A, Voltage - DC Reverse (Vr) (Max): 200 V, Grade: Military, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: D-5B, Current - Average Rectified (Io): 3A, Technology: Standard, Reverse Recovery Time (trr): 150 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SQ-MELF, E, Packaging: Bulk.
Weitere Produktangebote JANTXV1N5417US
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| JANTXV1N5417US | Hersteller : Microchip / Microsemi |
Diodes - General Purpose, Power, Switching Rectifier |
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