Technische Details JANTXV1N5418US MICROSEMI
Description: DIODE GEN PURP 400V 3A D-5B, Qualification: MIL-PRF-19500/411, Grade: Military, Current - Reverse Leakage @ Vr: 1 µA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A, Voltage - DC Reverse (Vr) (Max): 400 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: D-5B, Current - Average Rectified (Io): 3A, Technology: Standard, Reverse Recovery Time (trr): 150 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SQ-MELF, E, Packaging: Bulk, Part Status: Active.
Weitere Produktangebote JANTXV1N5418US
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JANTXV1N5418US | Hersteller : Microchip Technology |
 Description: DIODE GEN PURP 400V 3A D-5BQualification: MIL-PRF-19500/411 Grade: Military Current - Reverse Leakage @ Vr: 1 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: D-5B Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SQ-MELF, E Packaging: Bulk Part Status: Active |
Produkt ist nicht verfügbar |
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| JANTXV1N5418US | Hersteller : Microchip / Microsemi |
Small Signal Switching Diodes 400 V UFR,FRR |
Produkt ist nicht verfügbar |