Technische Details JANTXV1N5420 Microsemi
Description: DIODE GEN PURP 600V 3A B AXIAL, Packaging: Bulk, Package / Case: B, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 250 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: B, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A, Current - Reverse Leakage @ Vr: 1 µA @ 600 V, Grade: Military, Qualification: MIL-PRF-19500/411.
Weitere Produktangebote JANTXV1N5420
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
JANTXV1N5420 | Hersteller : Microchip Technology |
 Description: DIODE GEN PURP 600V 3A B AXIALPackaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V Grade: Military Qualification: MIL-PRF-19500/411 |
Produkt ist nicht verfügbar |
|
| JANTXV1N5420 | Hersteller : Semtech Corporation |
Description: DIODE GEN PURP 600V 4.5A AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Capacitance @ Vr, F: 120pF @ 4V, 1MHz Current - Average Rectified (Io): 4.5A Supplier Device Package: Axial Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V Grade: Military Qualification: MIL-PRF-19500/411 |
Produkt ist nicht verfügbar |
||
| JANTXV1N5420 | Hersteller : Microchip / Microsemi |
Small Signal Switching Diodes 660V 3A UFR,FRR THT |
Produkt ist nicht verfügbar |