Technische Details JANTXV1N5420 Microsemi
Description: DIODE GEN PURP 600V 3A B AXIAL, Current - Reverse Leakage @ Vr: 1 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: B, Axial, Current - Average Rectified (Io): 3A, Technology: Standard, Reverse Recovery Time (trr): 250 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: B, Axial, Packaging: Bulk, Qualification: MIL-PRF-19500/411, Grade: Military.
Weitere Produktangebote JANTXV1N5420
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JANTXV1N5420 | Hersteller : Microchip Technology |
 Description: DIODE GEN PURP 600V 3A B AXIALCurrent - Reverse Leakage @ Vr: 1 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: B, Axial Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 250 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: B, Axial Packaging: Bulk Qualification: MIL-PRF-19500/411 Grade: Military |
Produkt ist nicht verfügbar |
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| JANTXV1N5420 | Hersteller : Semtech Corporation |
Description: DIODE GEN PURP 600V 4.5A AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Capacitance @ Vr, F: 120pF @ 4V, 1MHz Current - Average Rectified (Io): 4.5A Supplier Device Package: Axial Grade: Military Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V Qualification: MIL-PRF-19500/411 |
Produkt ist nicht verfügbar |
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| JANTXV1N5420 | Hersteller : Microchip / Microsemi |
Small Signal Switching Diodes 660V 3A UFR,FRR THT |
Produkt ist nicht verfügbar |