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JANTXV1N5552/TR

JANTXV1N5552/TR Microchip Technology


lds-0230.pdf Hersteller: Microchip Technology
Rectifier Diode Switching 600V 5A 2000ns 2-Pin Case E T/R
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Technische Details JANTXV1N5552/TR Microchip Technology

Description: DIODE GEN PURP 600V 5A, Packaging: Tape & Reel (TR), Package / Case: B, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Current - Average Rectified (Io): 5A, Supplier Device Package: B, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A, Current - Reverse Leakage @ Vr: 1 µA @ 600 V, Qualification: MIL-PRF-19500/420.

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JANTXV1N5552 T/R JANTXV1N5552 T/R Hersteller : Microchip Technology lds-0230.pdf Rectifier Diode Switching 600V 5A 2000ns 2-Pin Case E T/R
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JANTXV1N5552/TR JANTXV1N5552/TR Hersteller : Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 600V 5A
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Qualification: MIL-PRF-19500/420
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JANTXV1N5552/TR JANTXV1N5552/TR Hersteller : Microchip / Microsemi LDS_0230-1592115.pdf Rectifiers 600 V Std Rectifier
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