JANTXV1N5552 Microchip / Microsemi
auf Bestellung 348 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 33.32 EUR |
| 10+ | 32.88 EUR |
| 25+ | 23.46 EUR |
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Technische Details JANTXV1N5552 Microchip / Microsemi
Description: DIODE GEN PURP 600V 5A AXIAL, Packaging: Bulk, Package / Case: B, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Current - Average Rectified (Io): 5A, Supplier Device Package: B, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A, Current - Reverse Leakage @ Vr: 1 µA @ 600 V, Qualification: MIL-PRF-19500/420.
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JANTXV1N5552 | Hersteller : Microchip Technology |
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JANTXV1N5552 | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 600V 5A AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 5A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V Qualification: MIL-PRF-19500/420 |
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| JANTXV1N5552 | Hersteller : Semtech Corporation |
Description: DIODE GEN PURP 600V 5A AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 92pF @ 5V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: Axial Grade: Military Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V Qualification: MIL-PRF-19500/420 |
Produkt ist nicht verfügbar |