JANTXV1N5553US Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 3A B SQ-MELF
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
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Technische Details JANTXV1N5553US Microchip Technology
Description: DIODE GEN PURP 800V 3A B SQ-MELF, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A, Voltage - DC Reverse (Vr) (Max): 800 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: B, SQ-MELF, Current - Average Rectified (Io): 3A, Technology: Standard, Reverse Recovery Time (trr): 2 µs, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SQ-MELF, B, Packaging: Bulk.
Weitere Produktangebote JANTXV1N5553US
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|---|---|---|---|---|---|
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JANTXV1N5553US | Semtech Corporation |
Description: DIODE GEN PURP 800V 5A Current - Average Rectified (Io): 5A Capacitance @ Vr, F: 92pF @ 5V, 1MHz Technology: Standard Reverse Recovery Time (trr): 2 µs Speed: Standard Recovery >500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SQ-MELF Packaging: Bulk Current - Reverse Leakage @ Vr: 1 µA @ 800 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
JANTXV1N5553US | Microchip / Microsemi |
Rectifiers Rectifier |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| JANTXV1N5553US |
|
Hersteller: Semtech Corporation
Description: DIODE GEN PURP 800V 5A
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 92pF @ 5V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Description: DIODE GEN PURP 800V 5A
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 92pF @ 5V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N5553US |
|
Hersteller: Microchip / Microsemi
Rectifiers Rectifier
Rectifiers Rectifier
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH