Technische Details JANTXV1N5615 Semtech
Description: DIODE GEN PURP 200V 1A AXIAL, Current - Reverse Leakage @ Vr: 500 nA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 200 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: A, Axial, Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 45pF @ 12V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 150 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Qualification: MIL-PRF-19500/429, Grade: Military, Package / Case: A, Axial, Packaging: Bulk.
Weitere Produktangebote JANTXV1N5615
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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JANTXV1N5615 | Microchip Technology |
Description: DIODE GEN PURP 200V 1A AXIALCurrent - Reverse Leakage @ Vr: 500 nA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Active Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: A, Axial Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 45pF @ 12V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Qualification: MIL-PRF-19500/429 Grade: Military Package / Case: A, Axial Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 132 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
JANTXV1N5615 | Microchip / Microsemi |
Rectifiers UFR,FRR |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| JANTXV1N5615 |
![]() |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Qualification: MIL-PRF-19500/429
Grade: Military
Package / Case: A, Axial
Packaging: Bulk
Description: DIODE GEN PURP 200V 1A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Qualification: MIL-PRF-19500/429
Grade: Military
Package / Case: A, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 132 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N5615 |
![]() |
Hersteller: Microchip / Microsemi
Rectifiers UFR,FRR
Rectifiers UFR,FRR
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


