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Technische Details JANTXV1N5806 Microchip / Microsemi
Description: DIODE GEN PURP 150V 1A AXIAL, Packaging: Bulk, Package / Case: A, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Capacitance @ Vr, F: 25pF @ 10V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: A, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 150 V, Qualification: MIL-PRF-19500/477.
Weitere Produktangebote JANTXV1N5806
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| JANTXV1N5806 | MICROSEMI |
A/VOIDELESS HEREMTICALLY ULTRA FAST RECTIFIER (LESS THAN 100NS) 1N5806 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| JANTXV1N5806 | Semtech |
2.5 A, 150 V, SILICON, RECTIFIER DIODE POWER DISCR 1N5806 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
JANTXV1N5806 | Microchip Technology |
Description: DIODE GEN PURP 150V 1A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Qualification: MIL-PRF-19500/477 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 162 Stücke Im Einkaufswagen Stück im Wert von UAH |
| JANTXV1N5806 | Semtech Corporation |
Description: DIODE GEN PURP 150V 3.3A AXIAL Packaging: Bulk Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 5V, 1MHz Current - Average Rectified (Io): 3.3A Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 175°C Grade: Military Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V Qualification: MIL-PRF-19500/477 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| JANTXV1N5806 |
Hersteller: MICROSEMI
A/VOIDELESS HEREMTICALLY ULTRA FAST RECTIFIER (LESS THAN 100NS) 1N5806
Anzahl je Verpackung: 1 Stücke
A/VOIDELESS HEREMTICALLY ULTRA FAST RECTIFIER (LESS THAN 100NS) 1N5806
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N5806 |
Hersteller: Semtech
2.5 A, 150 V, SILICON, RECTIFIER DIODE POWER DISCR 1N5806
Anzahl je Verpackung: 1 Stücke
2.5 A, 150 V, SILICON, RECTIFIER DIODE POWER DISCR 1N5806
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N5806 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 150V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
Mindestbestellmenge: 162 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| JANTXV1N5806 |
Hersteller: Semtech Corporation
Description: DIODE GEN PURP 150V 3.3A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 3.3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Description: DIODE GEN PURP 150V 3.3A AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 5V, 1MHz
Current - Average Rectified (Io): 3.3A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH