JANTXV1N5807US Microchip Technology
Hersteller: Microchip Technology
Description: DIODE STANDARD 50V 3A D5B
Qualification: MIL-PRF-19500/477
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
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Technische Details JANTXV1N5807US Microchip Technology
Description: DIODE STANDARD 50V 3A D5B, Qualification: MIL-PRF-19500/477, Current - Reverse Leakage @ Vr: 5 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A, Voltage - DC Reverse (Vr) (Max): 50 V, Grade: Military, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: D-5B, Current - Average Rectified (Io): 3A, Capacitance @ Vr, F: 60pF @ 10V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 30 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SQ-MELF, E, Packaging: Bulk.
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JANTXV1N5807US | Hersteller : Semtech Corporation |
Description: DIODE STANDARD 50V 6A Qualification: MIL-PRF-19500/477 Current - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Voltage - DC Reverse (Vr) (Max): 50 V Grade: Military Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 60pF @ 5V, 1MHz Technology: Standard Reverse Recovery Time (trr): 30 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SQ-MELF Packaging: Bulk |
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JANTXV1N5807US | Hersteller : Semtech |
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