JANTXV1N6080 Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 2A G AXIAL
Packaging: Bulk
Package / Case: G, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: G, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: MIL-PRF-19500/503
Description: DIODE GEN PURP 100V 2A G AXIAL
Packaging: Bulk
Package / Case: G, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 2A
Supplier Device Package: G, Axial
Operating Temperature - Junction: -65°C ~ 155°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: MIL-PRF-19500/503
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Technische Details JANTXV1N6080 Microchip Technology
Description: DIODE GEN PURP 100V 2A G AXIAL, Packaging: Bulk, Package / Case: G, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Current - Average Rectified (Io): 2A, Supplier Device Package: G, Axial, Operating Temperature - Junction: -65°C ~ 155°C, Grade: Military, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 37.7 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V, Qualification: MIL-PRF-19500/503.
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