JANTXV1N6474US/TR Microchip Technology
Hersteller: Microchip Technology
Description: TVS DIODE 30.5VWM 47.5VC G-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, G
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 181A (8/20µs)
Voltage - Reverse Standoff (Typ): 30.5V
Supplier Device Package: G-MELF (D-5C)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 30.5VWM 47.5VC G-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, G
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 181A (8/20µs)
Voltage - Reverse Standoff (Typ): 30.5V
Supplier Device Package: G-MELF (D-5C)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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Technische Details JANTXV1N6474US/TR Microchip Technology
Description: TVS DIODE 30.5VWM 47.5VC G-MELF, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, G, Mounting Type: Surface Mount, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 181A (8/20µs), Voltage - Reverse Standoff (Typ): 30.5V, Supplier Device Package: G-MELF (D-5C), Unidirectional Channels: 1, Voltage - Breakdown (Min): 33V, Voltage - Clamping (Max) @ Ipp: 47.5V, Power - Peak Pulse: 1500W (1.5kW), Power Line Protection: No, Part Status: Active.
Weitere Produktangebote JANTXV1N6474US/TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| JANTXV1N6474US/TR | Hersteller : Microsemi |
 ESD Suppressors / TVS Diodes |
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